Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation

Characterization on an InGaAs-based self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation on the current-voltage (I-V) characteristic of L-shaped 70 nm channel SSD has been conducted using ATLAS two-dimensional (2D) simulator for different insulating channel materials with relative permittivity ranging from 1.0 to 9.3 under temperature range of 300 K-600 K. A similar I-V curve to diode behavior has been observed. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the effects of both permittivity and temperature to the rectification properties are observed. The results obtained can assist the design of SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.