From epitaxy to converters topologies what issues for 200 mm GaN/Si?

Energy is one of the main societal challenges of the 21th century. With the growth of population and cities, CO
₂
emission reduction, efficiency improvements especially in transportation modes will have to be enhanced. Cost will the main driver of power devices. This paper reviews the developments at CEA-Leti in power electronics. A complete GaN on 200 mm line has been implemented. For each stage of device realization a discussion of the issues will be done.