High Sensitivity MEMS Accelerometer Using PZT-Based Four L-Shaped Beam Structure

Piezoelectric accelerometers present higher sensitivities and better signal-to-noise ratios in comparison with piezoresistive and capacitive accelerometers. A micro-electromechanical system (MEMS) piezoelectric accelerometer was designed and manufactured with four L-shaped beams covered by Lead Zirconate Titanate (PZT) thin film with
$1~\mu \text{m}$
in thickness which was deposited using sol-gel methods. The micro devices, whose size and the optimized PZT distribution were determined by theoretical and simulation analysis, were fabricated on the silicon substrate using PZT films working in the
${d}_{31}$
mode. Different from the conventional vertical crossbeam accelerometers, the designed structure devotes to the larger area piezoelectric film laid on L-shaped supporting beams with higher energy transferring efficiency for sensing. Then the chips of accelerometer were fabricated, and the proposed sensor was packaged on the printed circuit board (PCB). In addition, the microsphere was integrated in the center of the beams. Finally, the properties of the accelerometer were measured by vibration measurement system. The measuring results show that the initial sensitivity of the accelerometer is 28.14mV/g at 500Hz. The proposed piezoelectric accelerometer has high sensitivity and low resonance frequency, and the frequency response on each beam is consistent, providing a new structure for high-performance accelerometer.