The Radiation Hardness of Quantum Dot Embedded in High Electron Mobility Transistor Force-Sensitive Structure

This paper studied the radiation hardness of InAs Quantum Dot(QD) embedded in high electron mobility transistor (HEMT) for force-sensitive structure, and further verified its high irradiation properties and high sensitivity. The transfer characteristics, output characteristics, structural changes and force-sensitivity of InAs QD-HEMT and HEMT structure are analyzed after irradiated with 1900-Mev
¹⁸¹
Ta ions at different fluences. The experiment results of electrical characterization indicated that the radiation hardness of InAs QD-HEMT was 3.5 times higher than that of HEMT. The mechanical sensitivity of pristine InAs QD-HEMT structure was 0.153 mA/KPa, which was higher than that of pristine HEMT structure by 0.088mA/KPa, and the force-sensitivity of InAs QD-HEMT structure was less affected by irradiation. The results indicate that InAs QD-HEMT force-sensitive structure has a strong tolerance to heavy ion irradiation. The irradiation hardens, and force-sensitive characteristics of the device can be improved by using InAs QD-HEMT structure, which can provide radiation protection for MEMS sensors applied in a harsh radiation environment.