Detection of Hydrogen Peroxide Using rGO/PPy Nanocomposites in Silicon Dioxide Trench Embedded Field Effect Transistor

This work demonstrates the high-performance hydrogen peroxide (H
₂
O
₂
) sensing field-effect transistor (FET) using reduced graphene oxide - polypyrrole (rGO/PPy) nanocomposites. The SiO
₂
trench type FET is fabricated using lithography and etching techniques. The fabricated SiO
₂
trench structure was used not only for holding H
₂
O
₂
but also for sensing purpose. The morphology and structure of the rGO/PPy nanocomposites were analyzed and confirmed their bonding. The output electrical signal changes as the concentration of H
₂
O
₂
increases. The device shows a fast response of 5 s and is highly stable with excellent sensitivity. The detection limit obtained is 10 pM at appropriate signal-to-noise ratio (S/N) of the sensing electrical signal. The device is high selectivity towards H
₂
O
₂
. The device structure may be employed for other liquid sensing applications.