Modeling and Simulation of Ultrafast and Highly Efficient Single Photon Detection From Infrared to Ultraviolet

In this paper we have proposed the design of a single-photon thermoelectric detector's detection pixel consisting of heat sink (W), thermoelectric sensor (CeB
₆
), absorber (W), and antireflection layer (SiO
₂
). It is justified that the detector with such a detection pixel can provide for the system efficiency above 90% for photons with energy 0.8-4 eV. Modeling and simulation are used to study the processes of heat propagation in four-layer detection pixel of a thermoelectric single-photon detector after photon absorption. Calculations were carried out on the basis of the equation of heat distribution from a limited volume using the three-dimensional matrix method for differential equations. The temporal dependence of the amplitude of the signal appearing on the detection pixel was calculated for different thicknesses of detection pixel layers. The signal time delay, the maximum signal value, the maximum signal reaching time, the signal decay time to the background, and the detector's count rate were determined. It is shown that the maximum of the signal is many times higher than the background level, does not depend on the area of photon thermalization in the absorber and has a linear dependence on the photon energy. The construction of the detection pixel also provides for terahertz count rates. The signal time delay is less than a femtosecond. Detectors with such characteristics are in demand in various fields of science and may have a wide range of practical applications in future technologies.