Design of LTE-Band Microwave Power Detection System Based on Schottky Diode

In this paper, a novel microwave power detection system based on Schottky diode is constructed in order to measure microwave power in the LTE-band (1.8~2.7 GHz). The proposed detection system is consisted of three modules: a collecting module, a measuring module, and a processing module. Among them, a microwave power detection circuit based on Schottky diode is developed to realize the high-quality conversion of microwave power signal to voltage signal. The experimental results reveal that the presented system has good linearity. In the range of 1.8~2.7 GHz, the incident microwave power is increased from 1 uW to 50 mW, and the sensitivity of the detection system is 1.86 mV/uW at 2.0 GHz, 1.61 mV/uW at 2.3 GHz, and 1.2 mV/uW at 2.6 GHz, which is much better than other microwave power sensors. Therefore, the microwave power detection system based on Schottky diode provides an effective solution for microwave power detection in the LTE-band.