High Photo Sensing Performance With Electro-Optically Efficient Silicon Based ZnO/ZnMgO Heterojunction Structure

The bulk heterostructure having nanopillar growth on top surface of the proposed photodetector structure is a promising candidate of high detection for high resolution quantum optic and high speed optical communication. Here, we report Si-ZnO-ZnMgO having grown with aligned hexagonal nanopillars for high performance photo detector, due to having its high quantum efficiency. From the proposed structure (electrooptically modified) high responsivity of 2.857 × 10
²
AW
^-1
and detectivity of 1.33 × 10
¹⁵
cm Hz
^1/2
W
^-1
(3mm × 3mm) was achieved and also the small performance degradation with increase of temperature shows thermal stability.