A Pin-Hole Free Architecture for Vertical Infrared Photodetectors Based on Thin-Film Organic/Inorganic Hybrid Nanocomposite

A new architecture for thin-film organic/inorganic infrared (IR) photodetector is introduced. An IR photodetector based on the architecture, composed of PEDOT-PSS polymeric hole transporter layer and hybrid nanocomposite of PbSe/MEH-PPV photon absorber layer sandwiched between ITO and Al contacts is fabricated and characterized. This architecture removes the issue of catastrophic shorts occurring between the top and bottom contacts in vertical structure thin-film organic/inorganic photodetectors. Moreover, measurements show that, this structure reduces the device dark current significantly.