Impact of γ -Ray Irradiation on Graphene-Based Hall Sensors

The effects of total dose irradiation on graphene-based Hall sensors were investigated by
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Co γ-ray in this paper. The basic electrical parameters of the sensors were measured before and after γ-ray irradiation up to 1 Mrad(Si). Decreases in the Hall voltage, linearity and current-related sensitivity in response to γ-ray irradiation were observed. With the help of Raman spectroscopy and X-ray photoelectron spectra (XPS), the degradation after irradiation was attributed to the introduction of defects and the increase in doping concentrations in the graphene layer. Moreover, the introduction of defects and impurities enhanced the Coulomb scattering of carriers, resulting in a decrease in mobility, which in turn affected the sheet resistance. This work provides an insight into the interactions of ionizing irradiation with graphene-based Hall sensors, which could be applied in space or other irradiation sensitive applications.