Effect of Si+ Ion Implantation in α-Ga2O3 Films on Their Gas Sensitivity

The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001)
$\alpha $
-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of
$8\times 10^{{12}}$
–
$8\times 10^{{15}}$
cm
$^{-{2}}$
at an energy of 100 keV followed by postimplantation annealing increases the response of
$\alpha $
-Ga2O3 films to 3 vol% of H2 by 43 times at 400 °C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 °C. In addition,
$\alpha $
-Ga2O3 layers irradiated with a Si+ ion dose of
$8\times 10^{{13}}$
–
$8\times 10^{{15}}$
cm
$^{-{2}}$
demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiation effect on the gas-sensing properties of
$\alpha $
-Ga2O3 structures is proposed.Index
$\alpha $
-Ga2O3, gas sensitivity, halide vapor phase epitaxy (HVPE), ion implantation.