Indium Gallium Antimonide a better bottom subcell layer in III–V multijunction solar cells

An approach to modeling of III-V multijunction solar cell utilizing InGaSb as the bottom subcell layer and altering the band gaps of InGaP and InGaAs, a novel triple junction, has been presented which executes the ability to capture photons for wider range of the solar radiation spectrum than state-of-art multijunction designs and projects a theoretical efficiency of 34.33% under one sun concentration. InGaSb with a direct band gap of 0.54eV, internal quantum efficiency of more than 80% and the ability to capture photons in the near and far infrared zone up to 2200 nm has been demonstrated.