Dual-material gate schottky barrier UTB DG MOSFETs with Ge and III-V channel

Dual-material gate (DMG) Schottky Barrier (SB) MOSFETs with Si, Ge, and III-V channel are investigated by full quantum mechanical simulations. We find that DMG can be a significant performance booster which can overcome the limitations of SB MOSFETs. By applying DMG, on-state currents of Si, Ge, and GaSb channel devices increase by 3 to 4 times and ambipolar currents of InAs channel devices are suppressed below 0.1 μA/μm, resulting in I
_ON
/I
_OFF
of greater than 10
³
.