A Nonvolatile Multilevel Data Storage Memory Based on Two-Dimensional Materials for Aerospace Applications

Two-dimensional
$\alpha $
-In
₂
Se
₃
based nonvolatile memories with planar structure can share electrodes in the plane and avoid the crosstalk in the three-dimensional integration, which promotes realizing low-energy-consumption, high-density, low-weight and high-speed devices used for the aerospace. However, the nonvolatile multilevel data storage memory performance on
$\alpha $
-In
₂
Se
₃
is rarely investigated. What’s more, the reliability of
$\alpha $
-In
₂
Se
₃
based nonvolatile multilevel data storage memories should be considered before they are used in the aerospace. In this work, the nonvolatile multilevel data storage behavior of a planar device based on
$\alpha $
-In
₂
Se
₃
is demonstrated, and the radiation resistance of the planar device is investigated further. Six states are achieved in the device, and the initial highest ON/OFF ratio is high to
$4.31 \times 10^{4}$
%. And with good reliability, these six states can be maintained for a long time. Although the nonvolatile multilevel data storage behavior decreases with the increasing irradiation fluence because of the displacement radiation effect, the planar device can still be used as nonvolatile multilevel data storage memory with good readout and retention performance when the irradiation fluence does not exceed
$1.4 \times 10^{14}$
/cm
²
. The high radiation resistance and stability evidences that the nonvolatile multilevel data storage memory based on
$\alpha $
-In
₂
Se
₃
nanoflake is competitive in the future application of aerospace.