Modeling and Analysis of Electro-Thermal Impact of Crosstalk Induced Gate Oxide Reliability in Pristine and Intercalation Doped MLGNR Interconnects

This work presents the electro-thermal analysis of crosstalk effects in pristine (undoped) and intercalation doped multilayer graphene nanoribbon interconnects (MLGNRs). A temperature dependent distributed T-network model of MLGNR interconnects has been developed for analyzing the crosstalk induced effects. Further, a temperature-aware gate oxide reliability model has been proposed to compute the crosstalk induced overshoot/undershoot impact on ultra-thin gate oxide for CMOS devices in terms of failure-in-time (FIT) for side-contact (SC) pristine as well as top-contact (TC) Arsenic pentafluoride (AsF
₅
), Ferric chloride (FeCl
₃
) and Lithium (Li) intercalation doped and undoped MLGNR interconnects. Subsequently, comparisons with Cu-based interconnects are made over a range of chip operating temperature from 233K to 450K.