I. Introduction
IT IS well known that RF microelectromechanical system (RF-MEMS) switches are very interesting devices for their RF performances, among them: high isolation and low insertion loss [1]–[3], low cost, small sizes and low weight. Thanks to these and other properties, RF-MEMS switches are attractive devices for space applications, radar enforcement, satellite communication systems and wide band transmissions. Despite their many advantages, the exploitation of these devices has not taken off due to robustness and reliability issues. We can distinguish three families of reliability concerns: mechanical issues (shock, vibration, fractures, and contact degradation, due to repetitive impacts) [4]; electrical issues (stiction due to charge trapping or power handling) [5] and environmental issues (due to humidity, temperature and radiation effect) [6]–[8].