A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode

In this article, a new metal-semiconductor field-effect transistor (MESFET) is introduced by amending the carrier distribution in the active regions of the device for radio frequency applications (RF). A quasi-two-dimensional material beta gallium oxide (β-Ga
₂
O
₃
) semiconductor is used as a fundamental material. To amend the carrier distribution, a tunnel diode (TD-βGO) is employed at the bottom of the source and the channel regions in the buried oxide (BOX) layer of MESFET. In our work, parameters such as the breakdown voltage, the selfheating effect, the kink effect, the parasitic capacitance, the power gains, the noise figure, and the carrier's concentration are obtained and compared with the conventional structure. As a result of employing the tunnel diode, the TD-βGO MESFET has better characteristics in comparison with the C-βGO MESFET though the drain current at the saturation region in the TD-βGO structure is reduced.