A Method Adopting Aging Corner to Improve the Accuracy of Device Aging Simulation Model

In order to predict the circuit liftetime accurately in the design phase, precise device aging models are enssential. Although some aging simulation models have been established in academia and industry, most of the aging models consider only single influence factor, resulting in differences between simulation and test. This paper proposes an aging simulation model that considers both process variation (PV) and aging variation (AV) among different MOSFETs. By statistically analyzing the influence of aging effect on device parameters, and borrowing from the concept process corner (PC), which is used to characterize the variation in the fabrication process, here in this paper we propose to use aging corner (AC), to characterize the variation in parameter degradation among devices. The simulation results show that the new model can predict the device degradation range more accurately.