1GHz wireless power delivery using 0.2×0.2mm2 on-chip inductor for 3-D stacked chips

A high frequency, high power density wireless interchip power delivery for 3-D Stacked chips applications is proposed and implemented in SMIC 65-nm CMOS process. To achieve high operating frequency-1 GHz, a frequency multiplication circuit is proposed. A capacitive compensation in transmitter side is used to improve the power delivery performance in Series-Paralled topology based on the principle of magnetic resonance coupling. 12 mW power delivery is achieved by using 0.2 × 0.2 mm
²
inductor with a 30 μm separation between stacked chips. The size of inductor is 91% reduction compared with previous reported chip-to-chip wireless power transmission systems.