A 13.7-mW 21–29-GHz CMOS LNA With 21.6-dB Gain and 2.74-dB NF for 28-GHz 5G Systems

We demonstrate a low-power (
$P_{D}$
) and high-gain 21–29-GHz low-noise amplifier (LNA) in 90-nm CMOS for 28-GHz 5G systems. Current-reused architecture is adopted for low
$P_{D}$
. Gain-boosting and body-floating techniques are used for gain and NF enhancement. The LNA consumes 13.7 mW and achieves prominent
$S_{21}$
of 21.6 dB, 3-dB bandwidth of 8.1 GHz (21.2–29.3 GHz), minimum noise figure (NF
$_{\mathrm {min}}$
) of 2.74 dB, average NF (NF
$_{\mathrm {ave}}$
) of 2.99 dB for 21–29 GHz, and figure of merit (FOM) of 61.7 GHz. Moreover, the LNA achieves input third-order intercept point (IIP3) of −9 dBm at 28 GHz. The chip size is only 0.348 mm
²
. To the authors’ knowledge, the NF and FOM performance are one of the best results ever reported for millimeter-wave CMOS LNAs with bandwidth greater than 7 GHz and
$P_{D}$
lower than 15 mW.