A High-Efficiency Self-Synchronous RF-DC Rectifier With a Fixed Broadband Phase Offset

This letter presents a broadband self-driving radio frequency-to-direct current (RF-dc) rectifier design realized on the CG2H40010F Cree's GaN device. First, the transistor modeling parameters for the reverse-biased I-V characteristics have been obtained to achieve the high-frequency rectification at negative drain biasing. Besides, an enhanced self-synchronization is achieved across the operating bandwidth through an additional microstrip open-stub line at the gate input matching network. Thus, an additional line maintains a fixed 180° phase offset between drain and gate voltages. Finally, the rectifier efficiency of >60% has been measured from 2.65 to 2.95 GHz for 10-W RF input power. The designed rectifier has been outperformed the recent designs in terms of operational bandwidth (300 MHz) and rectification efficiency.