A Measurement-Based Approach to Model Scaling Properties of FETs

This letter describes a new approach for determining the scaling properties of Field Effect Transistors (FETs). Unlike typical equivalent circuit-based scaling techniques, we propose to scale the electrical parameters at the ports of the device. The scaling rules are extracted by performing an exhaustive analysis of the scaling features of all the measured parameters. All possible scaling expressions are considered limited only by the number of available device samples with different dimensions. The analysis is completely automated.