A High-Gain Power-Efficient Wideband V-Band LNA in 0.18- $\mu\text{m}$ SiGe BiCMOS

This paper presents a high-gain power-efficient wideband V-band low noise amplifier (LNA) realized in 0.18- μm SiGe BiCMOS process. An effective wideband gain shaping method with gain enhancement under low power consumption is employed, where the 1st and 2nd inter-stage matching (ISM) network are designed for better conjugate matching around the lower and upper 3 dB cutoff frequency ends, respectively, without giving up the gains at the opposite frequency ends for each ISM network. The developed LNA achieves the peak measured gain of 32.5 dB at 61 GHz and over 29.5 dB gain across the 3 dB bandwidth from 43 to 67 GHz while consuming only 11.7 mW at 1.8 V supply voltage. The measured average noise figure and group delay variation are 6 dB and less than 28.3 ps over the entire bandwidth, respectively.