The Charge-Based Flicker Noise Model for HEMTs

The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which introduces the trap-charge fluctuation-based flicker noise modeling method to the charge-based MIT virtual source (MVS) HEMT model. This model is highly compatible with the MVS HEMT model. It can predict the flicker noise performance in a physically rigorous and accurate way. This model is verified by the excellent agreement between simulations and measurement results.