Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach

A novel and fast method for the measurement-based identification of an analytical field-effect transistor (FET) compact model from large-signal waveforms is presented. Based on a two-tone two-port experiment, a recently published nonlinear function sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm gallium nitride (GaN)-on-silicon carbide (SiC) high-electron-mobility transistor (HEMT) at 2.5 and 5 GHz.