Gate charge control of high-voltage Silicon-Carbide (SiC) MOSFET in power converter applications

Switching devices such as Silicon Carbide (SiC) MOSFET present significant performance improvement in high frequency switching power converter applications. This paper presents a gate charge profile investigation of a Silicon Carbide MOSFET and gate driver circuit solutions to optimize both switching speed, power losses and EMI requirements. Main technology issues of Silicon carbide MOSFET are presented in order to understand the correlation between the technology solutions and the switching performances. Driver circuit requirements are highlighted and discussed. A Miller plateau identification method is presented. An independently circuit control principle of drain current and drain-source voltage is presented and discussed. The circuital technique allows a positive impact on the reduction of power losses and electromagnetic interferences level.