1-MHz isolated bipolar half-bridge GaN gate driver for SiC MOSFETs

In this paper, 1-MHz isolated bipolar halfbridge SiC MOSFET gate drivers using GaN semiconductors are proposed. To realise the 1 MHz switching capability of the gate driver for SiC MOSFET, the half-bridge topology is used in conjunction with Digital Isolators. The design of the gate drivers takes into consideration the capability of driving SiC MOSFET at 1 MHz switching with less driving power loss and propagation delay. The proposed gate driver is designed and experimentally validated to drive SiC MOSFET at 1 MHz in the 1 kW boost converter. Satisfactory operation of the SiC gate drivers without significant self-heating and with less propagation delay at 1 MHz demonstrates their suitability for high-frequency, high-power applications.