Performance analysis of single- and multi-walled carbon nanotube based through silicon vias

This paper presents a comparative analysis for power, delay and bandwidth performance between single- (SWCNT) and multi-walled (MWCNT) carbon nanotube bundle filled through silicon vias (TSVs). A comprehensive and accurate electrical equivalent model of CNT bundled TSV is presented that takes into account the MOS effect of silicon substrate. The transfer function of driver-TSV-load (DTL) system is obtained by representing the via line with equivalent single conductor (ESC) model of CNT bundle based TSVs. Using absolute frequency response, it is observed that the bandwidth of 10-shell MWCNT bundled TSV is larger in comparison to the SWCNT bundle, 4-shell MWCNT and 8-shell MWCNT bundle based TSVs. Moreover, a 10-shell MWCNT bundle demonstrates substantial reduction in delay and power dissipation in comparison to the SWCNT bundle based TSV.