A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control

This work presents an intelligent driver IC for 400 V GaN-based Power Factor Correction (PFC) applications. The targeted power level of the converter is 100 W, with a switching frequency above 500 kHz. The IC was implemented in a 140 nm automotive BCD SOI process, while the GaN HEMT and Schottky diode were optimized in a Si-fab compatible GaN-on-Si process. A low-R
_on
DMOS is integrated in the driver IC to achieve high-speed cascode switching operation. The chip also features a novel dual-mode drive scheme with monolithic negative drive voltage capability and programmable slew rate, as well as a digital peak current-mode controller. Advanced digital PFC control schemes can therefore be implemented, while EMC performance and efficiency can be optimized through active slope control.