Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Degradation-free ultrahigh-voltage (>10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (V
_F
= 3.3 V at 100 A/cm
²
) and low differential on-resistance (R
_ON
= 3.4 mΩ.cm
²
) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 °C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (τ
_P
) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The τ
_P
is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.