A Two-Dimensional Subthreshold Current Model of Recessed-Source/Drain (Re-S/D) SOI MOSFETs with High-k Dielectric

An analytical surface-potential based sub threshold current model for short-channel recessed-source/ drain (Re-S/D) SOI MOSFETs with high-k dielectric is presented in this paper. The two-dimensional (2D) Poisson's equation has been solved in the channel region with suitable boundary conditions in order to determine the surface potential. The diffusion component of current density is considered for the sub threshold current modeling. The impact of EOT (Effective Oxide Thickness) (t'
_ox
), channel Length (L), gate-dielectric constant (ε'
_ox
) on sub threshold current has been investigated. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained from ATLAS
^TM
, a two dimensional device simulator from SILVACO.