FinFET based SRAM design: A survey on device, circuit, and technology issues

In this paper, we did a survey on FinFET based SRAM related device, circuit, and technology issues. As this is a novel and emerging technology to cope up with the technology scaling; therefore, we believe this literature review is much required and will help in future research in this area. The issues of optimized threshold voltage and supply voltage, metal gate work-function variation, surface orientation effect on circuit design, fin configuration optimization, independent gate-based design, asymmetrical designing concept, fabrication level optimization issues, tunnel FinFET, junctionless FinFET, pseudo-spin FinFET, etc. have been discussed throughout the paper.

I. Introduction

As the technology scaling continues, FinFET is known to be a potential alternative to solve the problems related to short channel effects of planar technology. FinFET is an emerging new technology and the memory circuits started to occupy a major area of a chip. Therefore, it is very important to have an overall literature review to understand the progress of FinFET SRAM considering the device, circuit, and technology issues.