Performance evaluation of MoS2-WTe2 vertical tunneling transistor using real-space quantum simulator

Layered two dimensional (2D) semiconductor materials enable vertical interlayer heterojunctions (HJ) without the requirement of lattice matching. Interlayer transport through a MoS
₂
-WTe
₂
vertical HJ transistor is studied by atomistic quantum device simulations. Ultra-steep subthreshold slope (SS) is obtained due to the utilization of band filtering as the switching mechanism. The simulator enables the investigation of the effects of atomic defects and trapped charges on the performance of the atomically thin HT transistor. It is shown that the ultra-steep SS in TMD vertical tunneling FETs is robust against both atomic defects in the TMD layers and charged impurity scattering.