16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM macros with wordline overdriven assist

We demonstrate 16 nm FinFET High-k/Metal-gate SRAM macros with a wordline (WL) overdriven read/write-assist circuit. Test-chip measurements confirm improved minimum operating voltage (V
_min
), standby leakage current, and access time compared to planar bulk CMOS. The proposed assist circuit improves V
_min
by 50 mV and improves read-access-time by more than 1.5 times in 256-kbit SRAM macros. Read current (I
_read
) dependence against the fin diffusion length was observed. An extra design guard-band is needed to provide a reliable operation margin.