Design of a Ku-band AlGaN/GaN low noise amplifier

AlGaN/GaN technology is attractive for its application to power amplifier. With the deepening of the research, noise performance of GaN device has also won acceptance. Compared with GaAs LNA, GaN LNA has a unique superiority on power handling. In this paper, a GaN Ku-band low noise amplifier is designed. A noise figure of 2.4dB at 16GHz and a gain of 18dB in the band of 14–18GHz are obtained at a drain voltage of 10V. The fabricated MMIC occupies only 2mm × 1.1mm.