Fully transparent ZnO thin-film transistors using conducting AZO films fabricated at room temperature

We report the fabrication and characterization of fully transparent zinc oxide (ZnO) thin-film transistors (TFTs) by using low resistivity transparent conducting Al-doped ZnO (AZO) thin-films. The AZO thin-films were grown by pulsed laser deposition (PLD) at room temperature. The deposition conditions of AZO layers by PLD were optimized for a transparent electrode. We succeeded in fabricating transparent ZnO-TFTs on glass substrates. A ZnO-TFT with 3-μm-long gate device exhibits a transconductance of 150 μS/mm and an ON/OFF ratio of 6.6×10
⁶
.