Annealing Treatment Influence on Photoluminescence of the n-GaN Blue LED after a Dry Etching Process

The annealing treatment was investigated in this paper in order to recover the surface damage caused by ion bombardment in a plasma etching process. At the beginning, the n-GaN samples were being heated and annealed in an N2 ambient which would result in influencing the electric and photonic characteristics. Eventually, it shows that the resistance has been improved after an annealing treatment especially at 550 ? situation. Meanwhile, photoluminescence (PL) measurements illustrate the same results of these n-GaN samples, which is increased > 200% than that of a non-annealing treatment group. However, the annealing treatment can't completely repair the luminescence intensity due to the point defects from the DUT surface.