Highly stable data SRAM-PUF in 65nm CMOS process

Physical Unclonable Functions (PUF) are innovative circuit extract key relying upon the intrinsic process variations in interconnects and transistors of integrated circuits. It can be used in many modern cryptographic protocols as keys or unique digital ID. This paper proposes a highly stable SRAM-PUF cell with isolate nMOS to improve the robustness of the circuit. This design is implemented in SMIC 65nm LP CMOS technology and the layout area of the cell occupies 1.9µm×1.15µm. The simulation results show that the SNM of the proposed solution improve 45% performance during a read operation compared with a traditional SRMA-PUF cell architecture. Meanwhile, it has a high level of stability under different corners.