Design and Fabrication of InGaAs FPAs Integrated With InP Mie Resonators

The design and fabrication of InP Mie resonators as a broadband anti-reflection coating for InGaAs/InP FPA sensors have been reported in this work. Using the finite-difference time-domain (FDTD) simulator, we obtained a reflectivity lower than 5% over the whole spectrum of 900 – 1650 nm, with the optimized structure of 200 nm height, 360 nm side length and 600 nm period InP resonators. The characterization was contrasted between the InGaAs focal plane array (FPA) with and without InP Mie resonators with measurements of the blackbody response signal, the noise and the quantum efficiency. A 16.7% improvement of the peak responsivity in the structured area has further demonstrated the promising prospect of such design in the application of InGaAs sensors as well as other spectral domain detectors.