Optical Float-Zone Grown Bulk $\beta$ -Ga2O3-Based Linear MSM Array of UV-C Photodetectors

In this letter, we demonstrate 1 × 8 linear metal-semiconductor-metal arrays of UV-C photodetectors based on optical-float-zone grown bulk (100)-oriented β-Ga
₂
O
₃
. The as-grown polished bulk samples exhibited an RMS roughness of 1.4 nm and the full-width at half-maxima of 0.19°. The average peak responsivity (257 nm), dark current, photo-to-dark current ratio, and UV-to-visible rejection ratio of the devices in the array were measured to be 4 AW
^-1
, 0.23 nA, ~10
²
, and ~10
³
, respectively, at a bias of 40 V. The uniformity as well as the variability of the detector parameters across the devices in the array was investigated before and after wire bonding.