Hybrid III–V on Silicon Laterally Coupled Distributed Feedback Laser Operating in the $O$ -Band

We report on the design, fabrication, and performances of a hybrid III-V/Si laterally coupled distributed feedback laser operating in the O-band. Instead of etching the grating on top of the silicon waveguide, it is etched on its edges, thus lowering the number of fabrication steps and offering more design possibilities. At room temperature, a maximum output power as high as 20 mW was reached within the Si waveguide as well as a side mode suppression ratio above 40 dB on the whole current range.