UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

AlGaN multiple quantum well lasers for optical pumping have been grown by metal-organic vapor phase epitaxy on high and low dislocation density AlN/sapphire templates. Lasers on planar templates exhibited high dislocation densities and high V-pit densities, but a smooth surface morphology leading to inefficient, but laterally very homogeneous optical emission. Lasing was not observed when optically pumped with up to 50 MW/cm
²
. Epitaxially laterally overgrown templates on patterned sapphire showed much lower dislocation densities, but also step bunching on the surface. This resulted in good photoluminescence efficiencies of up to 20%, but also in a higher lateral inhomogeneity of the emission. Lasers on these templates exhibited lasing at ~240 nm with low full-width at half-maximum of 1 nm and threshold power densities of 11-15 MW/cm
²
.