3.3–3.4-$\mu{\rm m}$ Diode Lasers Based on Triple-Layer GaInAsSb Quantum Wells

Diode lasers based on triple-layer GaInAsSb quantum wells (QWs) operating in continuous wave regime at room temperature were designed and fabricated. The fine adjustment of the device operating wavelength was achieved by independent control of the effective electron and hole QW widths. The modified W-QW design approach allowed using 50% In composition in 10-12-nm-wide QW to achieve laser operation above 3.2 μm. The diode lasers emitting at 3.3 and 3.4 μm demonstrated 50 mW per 50- μm-wide stripe and 30 mW per 100- μm-wide stripe at 17 °C, respectively.