Enhancement of Radiation Efficiency for DUV-LEDs by AlN-Doped Silicone Layer Filled Chip-Side

To reduce the side light loss of deep ultraviolet light emitting diodes (DUV-LEDs) and improve radiation efficiency, an AlN-doped silicone filled chip-side (ASFCS) packing method is proposed. The experimental results show that the radiation efficiency of DUV-LEDs using ASFCS package with 0.25wt% AlN content is improved by 5% under a driving current of 20 mA compared to the conventional package. In addition, the light reduction rate of the ASFCS package is lower than the conventional package by 3% after 800 hours of aging test at 60°C. Meanwhile, the thermal resistance of ASFCS structure is 48.73K/W.