A High-Power Fundamental-Mode Lateral Microstructure Laser

A novel InP-based semiconductor laser with lateral microstructure was investigated and fabricated. By the loss difference between the fundamental mode and high order modes and the expansion of the optical field at the output facet, the single-mode high-power output can be achieved. The maximum roll-off power of lasers increased by 12% under pulse conditions (
$100\mu \text{m}$
, 100 Hz). The maximum fundamental transverse mode output power increased by 21% under CW operation. The wavelength at the full-width half maximum of the laser was reduced by 32% at 1100 mA.