Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

In this work, a 4H-SiC n-i-p avalanche photodiode (APD) with n-layer formed by N ion implantation is demonstrated, in which recessed-window structure is used as termination for reducing electrical field crowding effect around the device edge. The APD with
$20 \mu \text{m}$
diameter active region exhibits low dark current of
$\sim $
5 pA, high gain of
$10^{6}$
, zero-bias peak quantum efficiency of 53.8 % at 265 nm. Two-dimensional avalanche photocurrent mapping indicates that uniform gain is realized across the device central region while edge-located premature breakdown is effectively suppressed. Since there is no shading effect of top contact metal, close to 100% percent of fill factor is achieved in the multiplication region. The APD can operate in Geiger mode by using a passive quenching circuit. A room temperature single photon detection capability is obtained at 280 nm, when the dark count rate is
$\sim $
28.8 Hz/
$\mu \text{m}^{2}$
.