Comparative study of digital inverter for CNTFET & CMOS technologies

This paper presents a deeper insight into the present need of the Carbon Nano Tube Field Effect Transistor (CNTFET) by its comparison with conventional MOSFET for digital applications. Here, one-single walled-32nm long-tube CNTFET technology has been considered as base and compared with 45nm, 32nm & 22nm CMOS technologies by implementing a digital inverter. Various parameters in current & voltage analysis have been compared through HSPICE simulations which indicate higher performance of CNTFET over the CMOS technology and the limitations of latter upon scaling down to 22nm technology node. However, deeper examination reveals an issue of short-circuit current transients in case of CNTFET inverter that must be prevented at nano regime.