14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS

This paper reports a fully integrated 40nm CMOS PA that utilizes a broadband parallel-series power combiner to achieve an output power (POUT) of 20.9dBm with more than 15GHz small-signal 3dB bandwidth (BW-3dB) and 22% PAE at 0.9V supply. The in-band variation of P1dB is only ±0.25dB. This silicon-based PA covers both 71-to-76GHz and 81-to-86GHz bands with uniform gain, output power and PAE.