A simulation of IGBT module under power cycling test condition

The performance of IGBT (Insulated Gate Bipolar Transistor) power module under power cycling test is investigated based on a FEA (Finite Element Analysis) method. Critical point of solder fatigue has been discovered through analysis. Thermal cycling test has also been simulated as a comparison. The impact of power module parameters, such as power dissipation of chip, cycle period, solder layer thickness and heat spreader has been studied through DOS (Design of Simulation). The disciplinary conclusion can be a reference for package design.