Abstract:
We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to...Show MoreMetadata
Abstract:
We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.
Date of Conference: 16-21 June 2013
Date Added to IEEE Xplore: 20 February 2014
ISBN Information:
Print ISSN: 0160-8371